Telecom Lead Europe: NXP Semiconductors has launched
the new PMPB11EN and PMPB20EN 30V N-Channel MOSFETs in a
2-mm x 2-mm low-profile DFN package with tin-plated, solderable side pads.
The company claims that these are the industry’s MOSFETs
and are the first of more than 20 devices housed in theDFN2020MD-6 (SOT1220)
package from NXP.
Additionally, these MOSFETs enhance NXP’s leadless MOSFET
line-up which will include more than 60 types in 2-mm x 2-mm and 1-mm x 0.6-mm
package sizes by the end of this year.
These unique side pads offer the advantage of
optical soldering inspection, as well as a better quality of solder connection
compared to conventional leadless packages.
Both MOSFETs have a maximum drain current (ID) of
>10 A, and very low Rds(on) values of 12 mOhm typ and 16.5 mOhm typ at 10V
respectively for reduced conduction losses, which enable lower power
consumption and longer battery life.
Only 0.6 mm in height, the new MOSFETs are also thinner
than most 2-mm x 2-mm products, which makes them perfect for ultra-small load
switches, power converters, and charger switches in portable applications such
as smartphones and tablets.
The MOSFETs are also well suited for other
space-constrained applications including DC motors, server and network
communications, as well as LED lighting, where power density and efficiency are
critical.
NXP expands LDMOS RF power transistor portfolio for wireless
base stations
Recently, NXP Semiconductors expanded its LDMOS RF power
transistor portfolio for wireless base stations.
The new generation power transistor portfolio features
linearized efficiency, gain and wideband capability.
editor@telecomlead.com
