SK Hynix develops 12-layer HBM3 product with 24 GB memory capacity

SK Hynix has announced the development of a new HBM3 product with a 24GB memory capacity, which is the largest in the industry.
SK Hynix chip investment in NANDHBM3 is the latest and fourth-generation product that vertically interconnects multiple DRAM chips to enhance data processing speed. SK Hynix engineers improved process efficiency and performance stability by using Advanced Mass Reflow Molded Underfill (MR-MUF) technology in the latest product, while Through Silicon Via (TSV) technology reduced the thickness of a single DRAM chip by 40 percent, achieving the same stack height level as the 16GB product.

SK Hynix’s HBM3 can process up to 819GB per second, making it the optimal product for processing large volumes of data. The company plans to begin supplying the new products to the market from the second half of the year, in line with growing demand for premium memory products driven by the AI-powered chatbot industry.

Samples of the 24GB HBM3 product have already been provided to multiple customers who have expressed great interest. SK Hynix aims to complete mass production preparation for the new product within the first half of the year to further solidify its leadership in the cutting-edge DRAM market in the era of AI.

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