Infineon has announced a groundbreaking development in power semiconductor technology with the introduction of the world’s first 300 mm power gallium nitride (GaN) wafer technology.
Germany-based Infineon’s revenue fell 9 percent to €3.70 billion with a gross margin of 40.2 percent in the third quarter of the 2024 fiscal year.
This innovation positions Infineon as the first company to master GaN chip production on 300 mm wafers within a scalable, high-volume manufacturing environment. The development promises to significantly advance the adoption of GaN-based power semiconductors across industries.
The size of the GaN semiconductor device market is forecast to reach $32.92 billion by 2031 from $20.50 billlion in 2023 — at a 6.23 percent CAGR during the forecast period for 2024-2031.
GaN-based power semiconductors offer numerous advantages over traditional silicon chips, making them a preferred choice in industrial, automotive, and consumer electronics applications.
These semiconductors are rapidly being adopted in power supplies for AI systems, solar inverters, electric vehicle chargers, and motor-control systems. The switch to 300 mm wafers provides a 2.3-fold increase in chip output compared to 200 mm wafers, leading to higher production efficiency and reduced costs.
Key benefits of GaN-based semiconductors include improved energy efficiency, smaller device sizes, lighter weight, and enhanced performance at high voltages and temperatures. These characteristics make GaN chips an attractive solution for a wide range of applications, from smartphones and laptops to electric vehicles and renewable energy systems.
“This technological success is the result of our innovative strength and demonstrates our leadership in the GaN market,” said Jochen Hanebeck, CEO of Infineon Technologies. The integration of 300 mm GaN technology will be a game-changer for the industry, enabling Infineon to lead in a market expected to reach several billion US dollars by the end of the decade.
Infineon’s existing silicon production infrastructure in Villach, Austria, has been key to the successful development of this 300 mm GaN wafer technology. The ability to utilize the same manufacturing equipment for both silicon and GaN chips ensures scalable production and stable supply chains, while reducing costs.
This technological advancement is set to drive GaN chip prices closer to those of silicon-based alternatives, making them more accessible for mainstream adoption. Infineon will showcase its 300 mm GaN wafers at the electronica trade show in Munich in November 2024.
