ZTE taps IDT RapidIO 10xN semiconductors for new base stations

ZTE at Mobile World Congress 2016Integrated Device Technology (IDT) announced that ZTE has selected the IDT RapidIO 10xN interconnect semiconductors for the new generation of wireless base stations.

The IDT chip is a part of the recently introduced RXS switch family claiming to enable ZTE system to meet the capacity and scalability over the coming years. IDT prior generation RapidIO switches are applied in about 4G LTE phone call and downloads, virtually.

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“IDT RapidIO switches are ubiquitous in the communications field, and this new generation of switches delivers significantly better performance, preparing us well for the systems oftomorrow,” said Tian Sen, chief engineer, Baseband Unit Department, ZTE.

The 50Gbps RapidIO interconnect claims to offer better communication with deterministic latency for use in LTE, next generation LTE-A and 5G systems.  Tthe system architecture needs communication between many heterogeneous processing components, including ASICs, FPGAs, and processors connected through a RapidIO fabric.

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The RXS switches exceed the latest RapidIO 10xN specification and deliver over twice the performance of previous generation of switches by IDT.

The RXS switches are ideal for applications with intensive bandwidth and low latency requirements, such as mobile edge computing, high-performance computing, and data analytics.

ALSO READ: ZTE unveils H1 2016 revenue

ZTE reported an overall operating revenue increase of 4.05% up to CNY 47.76 billion, out of which CNY 27.8 billion, or about 58 percent is domestic revenue and CNY 19.95 came from international business.

ZTE also invested 15 percent of its total revenue or RMB7.06 billion in R&D, during this half year with a profit of 1.77 billion yuan.

ZTE also revealed its company strategy, M-ICT 2.0, intended to drive the company growth over the next five years.

Vina Krishnan
editor@telecomlead.com

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