Toshiba has developed an SP10T RF antenna switch with a MIPI RFFE interface that achieves the lowest insertion loss and smallest size in the industry for the smartphone market. Sample shipment starts from today.
The new product uses TaRF5, a new generation TarfSOI (Toshiba advanced RF SOI) process using silicon on insulator (SOI) technology.
By using the TaRF5 process, the new samples achieve 25 percent improvement in insertion loss (f=2.7GHz) and 40 percent size reduction against products using the TaRF3 process. These improvements can lead to longer battery operating time and smaller mounting space, which can also contribute to smaller sizes for products in which they are used.
Since developing the SOI-CMOS process for smartphone RF antenna switches in 2009, Toshiba has continually developed new generation processes and devices offering improved performance. With LTE now being implemented worldwide, and LTE-Advanced expected to follow, requirements for RF antenna switches are leaning towards multi-port and complex functions.
To meet those market demands, Toshiba plans to continue to develop products with low insertion loss and smaller sizes.
