Telecom Lead Europe: NXP Semiconductors has
launched 60 bipolar transistors (BJT) and 12 small-signal single N- and
P-channel Trench MOSFETs in the 1-mm x 0.6-mm x 0.37-mm DFN plastic SMD
package.
The expansion of transistor will assist NXP to strengthen
its presence in the smallest transistor package (DFN1006) portfolio.
The expanded portfolio includes a range of general
purpose and switching transistors, such as the industry standard types BC847
and BC857, as well as PMBT3904 and PMBT3906. It also features a broad choice of
42 resistor equipped transistors (RETs), which cover all standard resistor
combinations.
NXP offers BJTs and MOSFETs that contribute to lower
power consumption and longer battery life for all mobile applications. The low
saturation voltage transistor PBSS2515MB can handle peak currents of up to 1 A,
while featuring an ultra-low saturation voltage of 150 mV. NXP’s 20-60 V
MOSFETs such as the PMZB290UN feature extremely low on-resistance down to 250
mΩ, which reduces conduction losses.
These products are ideal for diverse power conversion and
switching functionalities in small, thin and battery-driven electronic devices
such as smartphones, MP3 players, tablets and eReaders. They are suited for
non-mobile but similarly space-constrained applications, such as LED TV sets
and automotive dashboards.
The new DFN1006B-3 portfolio offers the same high
electrical and thermal performance as equivalent devices in much larger
packages such as SOT23, SOT323 or SOT416, allowing a 1:1 replacement. This
saves valuable space on the PCB, as the 1006 mm (0402 inch) sized leadless
package has only one-tenth the footprint and less than half the height of
SOT23.
“In the race to miniaturize power switching
applications, DFN1006 gives engineers a head start and has tremendous potential
to replace SOT23 as the new standard,” said Joachim Stange, product marketing
manager, bipolar small-signal transistors, NXP Semiconductors.